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auirf2907zs-7p hexfet ? power mosfet www.irf.com 1 s d g features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * pd - 96321

automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. description absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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absolute maximum ratin g s parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i dm pulsed drain current p d @ t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.50 r cs case-to-sink, flat, greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? 40 a c/w c 10 lbf?in (1.1n?m) 300 2.0 20 max. 180 120 700 160 410 see fig.12a,12b,15,16 300 -55 to + 175 v (br)dss 75v r ds(on) typ. 3.0m ? max. 3.8m ? i d (silicon limited) 180a

2 www.irf.com s d g s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l=0.026mh, r g = 25 ? , i as = 110a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . this value determined from sample failure population starting t j = 25c, l=0.026mh, r g = 25 ? , i as = 110a, v gs =10v. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. solder mounted on ims substrate. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 75 ??? ??? v ? v dss / ? t j breakdown volta g e temp. coefficient ??? 0.066 ??? v/c r ds(on) smd static drain-to-source on-resistance ??? 3.0 3.8 m ? v gs(th) gate threshold volta g e 2.0 ??? 4.0 v g fs forward transconductance 94 ??? ??? s i dss drain-to-source leaka g e current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 200 na gate-to-source reverse leaka g e ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? 170 260 q gs gate-to-source char g e ??? 55 ??? q gd gate-to-drain ("miller") char g e ??? 66 ??? t d(on) turn-on dela y time ???21??? t r rise time ???90??? t d(off) turn-off dela y time ???92??? t f fall time ???44??? l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from packa g e and center of die contact c iss input capacitance ??? 7580 ??? c oss output capacitance ??? 970 ??? c rss reverse transfer capacitance ??? 540 ??? c oss output capacitance ??? 3750 ??? c oss output capacitance ??? 650 ??? c oss eff. effective output capacitance ???1110??? diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 35 53 ns q rr reverse recover y char g e ??? 40 60 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = v gs , i d = 250a v ds = 75v, v gs = 0v v ds = 75v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 110a t j = 25c, i f = 110a, v dd = 38v di/dt = 100a/ s t j = 25c, i s = 110a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 10v mosfet symbol v gs = 0v v ds = 25v v gs = 0v, v ds = 60v, ? = 1.0mhz conditions v gs = 0v, v ds = 0v to 60v ? = 1.0mhz, see fig. 5 r g = 2.6 ? i d = 110a v ds = 25v, i d = 110a v dd = 38v i d = 110a v gs = 20v v gs = -20v v ds = 60v v gs = 10v conditions nc ns nh pf ??? ??? ??? ??? ??? ??? ??? ??? 700 4.5 7.5 a 160

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qualification information ? d2 pak 7 pin msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c4 (1000v) (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4(425v) (per aec-q101-002) human body model class h2(4000v) (per aec-q101-001)

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 60s pulse width 0 25 50 75 100 125 150 i d ,drain-to-source current (a) 0 50 100 150 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 110a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1.0 10.0 100.0 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package

6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 180a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.1072 0.000096 0.2787 0.002614 0.1143 0.013847 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a )

www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 24a 34a bottom 110a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 110a

www.irf.com 9 fig 17. %&' ()(
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for n-channel hexfet power mosfets v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period +
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10 www.irf.com d 2 pak - 7 pin package outline dimensions are shown in millimeters (inches)

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www.irf.com 11 d 2 pak - 7 pin tape and reel

12 www.irf.com ordering information base p art number packa g e t yp e standard pac k com p lete part number form quantit y auirf2907zs-7p d2pak tube 50 auirf2907zs-7p tape and reel left 800 AUIRF2907ZS7PTL tape and reel right 800 auirf2907zs7ptr

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